6622.
Application of ANFIS for inverse prediction of hole profile in the square hole bore-expanding process
葉豐輝; Yeh, Fung-huei; Lu, Yuung-hwa; Li, Ching-lun; Wu, Ming-tsung
,
2006-04-01
[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article Journal of Materials Processing Technology 173(2), pp.136-144
淡江大學機械與機電工程學系 葉豐輝 Yeh, Fung-huei Lu, Yuung-hwa Li, Ching-lun Wu, Ming-tsung Application of ANFIS for inverse prediction of hole profile
6634.
High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
Lo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C.
,
2009-07
[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article Applied Physics Letters 95(4), 041109 (3 pages)
FIG. 3. Color onlinea Schematic of IP-LED structure. b EL spectra of IP-LED and R-LED in normal direction. c L-I-V curves of IP-LED
6635.
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
Lo, M.-H.; Tu, P.-M.; Wang, C.-H.; Cheng, Y.-J.; Hung, C.-W.; Hsu, S.-C.; Kuo, H.-C.; Zan, H.-W.; Wang, S.-C.; Chang, C.-Y.; Liu, C.-M.
,
2009-12
[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article Applied Physics Letters 95(21), 211103
)
FIG. 4. Color onlinea and b Cross section CL and SEM image of the
defect passivated epi-wafer under same magnification. c L-I and V-I curve
6638.
Response of suspended beams due to moving loads and vertical seismic ground excitations
Yau, J.D.; Fryba, L.
,
2007-12
[Graduate Institute & Department of Architecture] Journal Article Engineering Structures 29(12), pp.3255-3262
) = a(t), (9a)
u(L, t) = b(t), (9b)
E Iu(0, t) = I Iu(L, t) = 0, (9c)
where a(t) and b(t
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