Applying the selective Cu electroplating technique to light-emitting diodes

淡江大學機構典藏 > 工學院 > 化學工程與材料工程學系暨研究所 > 期刊論文 > Item 987654321/99713

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題名:	Applying the selective Cu electroplating technique to light-emitting diodes
作者:	Hsu, Shih-Chieh;Chen, Lo-Lin;Lin, Cheng-Lan;Lin, Dar-Jong
貢獻者:	淡江大學化學工程與材料工程學系
關鍵詞:	Electroplating;Selective electroplating;LED;GaN Cu bump
日期:	2014-04-01
上傳時間:	2014-12-11 12:59:22 (UTC+8)
出版者:	Dordrecht: Springer Netherlands
摘要:	We successfully fabricated a predefined patterned copper (Cu) substrate for thin GaN light-emitting diodes without barriers by the selective electroplating technique. The contours of Cu bumps fabricated using different electroplating modes and parameters were measured. We observed that the average thickness diminished with increasing current density. The current density conditions to obtain the best upright structure in the process were 40 and 80 mA/cm2.
關聯:	Research on Chemical Intermediates 40(6), pp.2347-2354
DOI:	10.1007/s11164-014-1611-z
顯示於類別:	[化學工程與材料工程學系暨研究所] 期刊論文

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