淡江大學機構典藏:Item 987654321/99713
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 64178/96951 (66%)
造访人次 : 10424570      在线人数 : 17482
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/99713


    Title: Applying the selective Cu electroplating technique to light-emitting diodes
    Authors: Hsu, Shih-Chieh;Chen, Lo-Lin;Lin, Cheng-Lan;Lin, Dar-Jong
    Contributors: 淡江大學化學工程與材料工程學系
    Keywords: Electroplating;Selective electroplating;LED;GaN Cu bump
    Date: 2014-04-01
    Issue Date: 2014-12-11 12:59:22 (UTC+8)
    Publisher: Dordrecht: Springer Netherlands
    Abstract: We successfully fabricated a predefined patterned copper (Cu) substrate for thin GaN light-emitting diodes without barriers by the selective electroplating technique. The contours of Cu bumps fabricated using different electroplating modes and parameters were measured. We observed that the average thickness diminished with increasing current density. The current density conditions to obtain the best upright structure in the process were 40 and 80 mA/cm2.
    Relation: Research on Chemical Intermediates 40(6), pp.2347-2354
    DOI: 10.1007/s11164-014-1611-z
    Appears in Collections:[化學工程與材料工程學系暨研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    art%3A10.1007%2Fs11164-014-1611-z.pdf1085KbAdobe PDF180View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback