We successfully fabricated a predefined patterned copper (Cu) substrate for thin GaN light-emitting diodes without barriers by the selective electroplating technique. The contours of Cu bumps fabricated using different electroplating modes and parameters were measured. We observed that the average thickness diminished with increasing current density. The current density conditions to obtain the best upright structure in the process were 40 and 80 mA/cm2.
Research on Chemical Intermediates 40(6), pp.2347-2354