Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma

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Title:	Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma
Authors:	A. Saravanan;Huang, B. R.;K. J. Sankaran;Dong, C. L.;Tai, N. H.;Lin, I. N.
Contributors:	淡江大學物理學系
Date:	2014-05
Issue Date:	2014-12-09 10:49:41 (UTC+8)
Publisher:	College Park: American Institute of Physics
Abstract:	This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.
Relation:	Applied Physics Letters 104(18), 181603(5pages)
DOI:	10.1063/1.4875808
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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