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    題名: Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma
    作者: A. Saravanan;Huang, B. R.;K. J. Sankaran;Dong, C. L.;Tai, N. H.;Lin, I. N.
    貢獻者: 淡江大學物理學系
    日期: 2014-05
    上傳時間: 2014-12-09 10:49:41 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.
    關聯: Applied Physics Letters 104(18), 181603(5pages)
    DOI: 10.1063/1.4875808
    顯示於類別:[物理學系暨研究所] 期刊論文

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