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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/99653


    Title: Structural and Electrical Properties of Conducting Diamond Nanowires
    Authors: Kamatchi Jothiramalingam Sankaran;Lin, Yen-Fu;Jian, Wen-Bin;Chen, Huang-Chin;Kalpataru Panda;Balakrishnan Sundaravel;Dong, Chung-Li;Tai, Nyan-Hwa;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Keywords: diamond nanowire films;graphitic grain boundary;high resolution transmission electron microscopy;scanning tunneling spectroscopy;hopping transport;electron field emission
    Date: 2013-02
    Issue Date: 2014-12-09 10:45:31 (UTC+8)
    Publisher: Washington, DC: American Chemical Society
    Abstract: Conducting diamond nanowires (DNWs) films have been synthesized by N2-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp3 diamond and sp2 graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current–voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott’s variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.
    Relation: ACS Applied Materials and Interfaces 5(4), pp.1294−1301
    DOI: 10.1021/am302430p
    Appears in Collections:[物理學系暨研究所] 期刊論文

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