Substrate and BMT Inter Layer Effect on Pulsed Laser Deposited Barium Strontium Titanate Thin Films and Its Microwave Properties

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題名:	Substrate and BMT Inter Layer Effect on Pulsed Laser Deposited Barium Strontium Titanate Thin Films and Its Microwave Properties
作者:	Joseph, P.T.;Chu, Ying-Hao;Chen, Yi Chun;Cheng, Hsiu Fung;Lin, I-Nan
貢獻者:	淡江大學物理學系
關鍵詞:	(Ba,Sr)TiO3;Ba(Mg1/3Ta2/3)O3;Microwave;Lattice parameter
日期:	2004-11
上傳時間:	2014-06-24 10:00:36 (UTC+8)
出版者:	Hsinchu, Taiwan : Chinese Society for Material Science
摘要:	We have deposited epitaxial Ba0.4Sr0.6TiO3 (BST) thin films via laser ablation on to SiO2 and Pt(Si) substrates with or without a Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer. The structure and microwave dielectric properties of the films have been investigated with two different substrates and a BMT buffer layer. We have found that BMT buffer layer enhances the crystalline growth behavior and also effects dielectric properties of the BST film. The incorporation of BMT buffer layer engenders a change in the lattice parameter BST of the order of 0.01277 on SiO2 substrates and 0.01189 on Pt-Si Substrates. The evanescent microprobe (EMP) analysis reveals the close relation in the variation of microwave property of the deposited films allied with the variation in lattice parameter and the grain size/shape.
關聯:	中國材料科學學會：2004CSMS論文集=Proceedings: the 2004 Annual Conference of the Chinese Society for Material Science, 3p.
顯示於類別:	[物理學系暨研究所] 會議論文

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