Hsinchu, Taiwan : Chinese Society for Material Science
We have deposited epitaxial Ba0.4Sr0.6TiO3 (BST) thin films via laser ablation on to SiO2 and Pt(Si) substrates with or without a Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer. The structure and microwave dielectric properties of the films have been investigated with two different substrates and a BMT buffer layer. We have found that BMT buffer layer enhances the crystalline growth behavior and also effects dielectric properties of the BST film. The incorporation of BMT buffer layer engenders a change in the lattice parameter BST of the order of 0.01277 on SiO2 substrates and 0.01189 on Pt-Si Substrates. The evanescent microprobe (EMP) analysis reveals the close relation in the variation of microwave property of the deposited films allied with the variation in lattice parameter and the grain size/shape.
中國材料科學學會：2004CSMS論文集=Proceedings: the 2004 Annual Conference of the Chinese Society for Material Science, 3p.