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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/98246


    Title: 硼摻雜之奈米鑽石薄膜的場發射特性研究
    Authors: 林伯霖;林諭男;周義評;陳通;鄭秀鳳
    Contributors: 淡江大學物理學系
    Keywords: 化學汽相沈積改質;鑽石薄膜;電子場發射;Chemical vapor deposition modification;Diamond film;Electron field emission;UNCD
    Date: 2006-11
    Issue Date: 2014-06-24 10:00:19 (UTC+8)
    Publisher: 臺南市:成功大學
    Abstract: 本實驗利用微波引致電漿化學汽相沉積法(MPECVD)在矽(Si)基板上成長UNCD (Ultra-nano crystalline diamond),陸續依比例參數通入所需摻雜的氣體(如硼(B)、甲烷(CH4)、氬氣(Ar)),在氬氣(Ar)和甲烷(CH4)流量比為99:1的電漿(Plasma)中,逐步將微波功率由500W提昇至750W來持續提供電漿(Plasma)能量,氣體總流量則由80 torr提昇至130 torr且維持於此,此外,本實驗在矽(Si)基板上所成核的形成層,則是使用BEN(Bias enhance nucleation)成核,在氣氛中,則是利用甲烷(CH4)做為沉積鑽石的碳源,以不同的成長參數(氣體比例、摻雜與否、磊晶時間)來控制奈米鑽石薄膜的沉積,針對不同的參數改變(摻雜氣體的氣體比例),透過原子力顯微鏡(AFM)量測CITS,探討不同鑽石薄膜摻雜硼的成長參數對電子場發射特性的影響。
    Relation: 2006年中國材料科學學會年會論文集,4頁
    Appears in Collections:[物理學系暨研究所] 會議論文

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