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    題名: Coexistence of Intrinic and Extrinsic Origins of Room Temperature Ferromagnetism in as Implanted and Thermally Annealed ZnO Films Probed by X-ray Absorption Spectroscopy
    作者: P. Satyarthi;S. Ghosh;B. Pandey;P. Kumar;Chen, C. L.;Dong, C. L.;Pong, W. F.;D. Kanjilal;K. Asokan;P. Srivastava
    貢獻者: 淡江大學物理學系
    日期: 2013-04-22
    上傳時間: 2014-03-19 16:53:50 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: The present work reports the structural and ferromagnetic properties of 200 KeV Ni 2+ ion implanted ZnO films before and after annealing at 650 °C in air and correlates these properties with their electronic structures. X-ray absorption spectroscopy (XAS) at Zn and Ni K-edges reveal that Zn metal cluster is absent in ZnO matrix, but there is an indication of clustering of Ni metal as a secondary phase. The XAS analysis of O K-edge shows (i) non-stoichiometric NiO segregation in as-implanted film and its absence/reduction in air annealed film, (ii) partial substitution of Ni 2+ ions at tetrahedral Zn sites, and (iii) presence of lattice defects such as oxygen vacancies in both films. The observed ferromagnetic behavior of as-implanted and air annealed films has both intrinsic as well as extrinsic origins. The intrinsic and extrinsic origins are discussed in terms of bound magnetic polaron model and presence of antiferromagnetic NiO phase/ferromagnetic Ni metal clusters, respectively.
    關聯: Journal of Applied Physics 113(18), 183708(6 pages)
    DOI: 10.1063/1.4804253
    顯示於類別:[物理學系暨研究所] 期刊論文

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