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    題名: Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping
    作者: Chang, Cheng-Kai;Satender Kataria;Kuo, Chun-Chiang;Abhijit Ganguly;Wang, Bo-Yao;Hwang, Jeong-Yuan;Huang, Kay-Jay;Yang, Wei-Hsun;Wang, Sheng-Bo;Chuang, Cheng-Hao;Chen, Mi;Huang, Ching-I;Pong, Way-Faung;Song, Ker-Jar;Chang, Shoou-Jinn;Guo, Jing-Hua;Tai, Yian;Masahiko Tsujimoto;Seiji Isoda;Chen, Chun-Wei;Chen, Li-Chyong;Chen, Kuei-Hsien
    貢獻者: 淡江大學物理學系
    關鍵詞: band gap;BN doping;chemical vapor deposition;graphene;micro-Raman;XAS-XES;XPS
    日期: 2013-02
    上傳時間: 2014-03-19 16:48:22 (UTC+8)
    出版者: American Chemical Society
    摘要: Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV–vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π–π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.
    關聯: ACS Nano 7(2), p.1333–1341
    DOI: 10.1021/nn3049158
    顯示於類別:[物理學系暨研究所] 期刊論文

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