資料載入中.....
|
請使用永久網址來引用或連結此文件:
https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/97398
|
| 題名: | Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping |
| 作者: | Chang, Cheng-Kai;Satender Kataria;Kuo, Chun-Chiang;Abhijit Ganguly;Wang, Bo-Yao;Hwang, Jeong-Yuan;Huang, Kay-Jay;Yang, Wei-Hsun;Wang, Sheng-Bo;Chuang, Cheng-Hao;Chen, Mi;Huang, Ching-I;Pong, Way-Faung;Song, Ker-Jar;Chang, Shoou-Jinn;Guo, Jing-Hua;Tai, Yian;Masahiko Tsujimoto;Seiji Isoda;Chen, Chun-Wei;Chen, Li-Chyong;Chen, Kuei-Hsien |
| 貢獻者: | 淡江大學物理學系 |
| 關鍵詞: | band gap;BN doping;chemical vapor deposition;graphene;micro-Raman;XAS-XES;XPS |
| 日期: | 2013-02-01 |
| 上傳時間: | 2014-03-19 16:48:22 (UTC+8) |
| 出版者: | American Chemical Society |
| 摘要: | Band gap opening and engineering is one of the high priority goals in the development of graphene electronics.Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV–vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π–π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices. |
| 關聯: | ACS Nano 7(2), p.1333–1341 |
| DOI: | 10.1021/nn3049158 |
| 顯示於類別: | [物理學系暨研究所] 期刊論文
|
文件中的檔案:
| 檔案 |
描述 |
大小 | 格式 | 瀏覽次數 |
|---|
| Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping.pdf | | 4388Kb | Adobe PDF | 4 | 檢視/開啟 | | index.html | | 0Kb | HTML | 454 | 檢視/開啟 | | index.html | | 0Kb | HTML | 301 | 檢視/開啟 | | index.html | | 0Kb | HTML | 288 | 檢視/開啟 |
|
在機構典藏中所有的資料項目都受到原著作權保護.
|
