淡江大學機構典藏:Item 987654321/97205
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    題名: STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films
    作者: Sundaravel, B.;Panda, Kalpataru;Dhandapani R.;Panigrahi, B. K.;Nair, K. G. M.;Lin, I-Nan
    貢獻者: 淡江大學物理學系
    關鍵詞: Diamond;Nanocrystalline materials;Grain boundaries;Ion implantation;Scanning tunneling microscopy
    日期: 2013-02
    上傳時間: 2014-03-18 10:13:26 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: 3 keV nitrogen ions are implanted into UNCD/Si from our 30 kV ion accelerator. Field emission property is enhanced upon nitrogen implantation in comparision to as-prepared UNCD. STM shows that there is agglomeration of diamond grains. CITS measurements show that diamond grains are the prominent electron emitters while grain boundaries were the prominent emitters for 75 keV N+ implantation. When N atoms are at the surface, electron emission by transfer-doping process appears to be the physical mechanism involved. When they are buried deeper as in the case of 75 keV ions, grain boundary conduction-channel process is valid.
    關聯: AIP Conference Proceedings 1512(1), pp.384-385
    DOI: 10.1063/1.4791072
    顯示於類別:[物理學系暨研究所] 期刊論文

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