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    Title: STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films
    Authors: Sundaravel, B.;Panda, Kalpataru;Dhandapani R.;Panigrahi, B. K.;Nair, K. G. M.;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Keywords: Diamond;Nanocrystalline materials;Grain boundaries;Ion implantation;Scanning tunneling microscopy
    Date: 2013-02
    Issue Date: 2014-03-18 10:13:26 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: 3 keV nitrogen ions are implanted into UNCD/Si from our 30 kV ion accelerator. Field emission property is enhanced upon nitrogen implantation in comparision to as-prepared UNCD. STM shows that there is agglomeration of diamond grains. CITS measurements show that diamond grains are the prominent electron emitters while grain boundaries were the prominent emitters for 75 keV N+ implantation. When N atoms are at the surface, electron emission by transfer-doping process appears to be the physical mechanism involved. When they are buried deeper as in the case of 75 keV ions, grain boundary conduction-channel process is valid.
    Relation: AIP Conference Proceedings 1512(1), pp.384-385
    DOI: 10.1063/1.4791072
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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