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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97203

    Title: Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment
    Authors: Ko, Tin-Yu;Liu, Yu-Lin;Sun, Kien-Wen;Lin, Yi-Jie;Fong, Shih-Chieh;Lin, I-Nan;Tai, Nyan-Hwa
    Contributors: 淡江大學物理學系
    Keywords: Ultrananocrystalline diamond;Nitrogen vacancy;Plasma;Photoluminescence;Color center
    Date: 2013-05
    Issue Date: 2014-03-18 10:04:29 (UTC+8)
    Publisher: Lausanne: Elsevier S.A.
    Abstract: Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.
    Relation: Diamond and Related Materials 35, pp.36-39
    DOI: 10.1016/j.diamond.2013.03.009
    Appears in Collections:[物理學系暨研究所] 期刊論文

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