English  |  正體中文  |  简体中文  |  Items with full text/Total items : 51511/86795 (59%)
Visitors : 8277370      Online Users : 87
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97192


    Title: Fabrication of nitrogen-doped ultrananocrystalline diamond nanowire arrays with enhanced field emission and plasma illumination performance
    Authors: Chang, Ting-Hsun;Lou, Shiu-Cheng;Tai, Nyan-Hua;Sankaran, K.J.;Chen, Chulung;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Keywords: nitrogen-doped ultrananocrystalline diamond (UNCD);silicon nanowire arrays (SiNAs)
    Date: 2012-07
    Issue Date: 2014-03-18 09:51:50 (UTC+8)
    Abstract: Large-area silicon nanowire arrays (SiNAs) were fabricated via metal catalytic etching technique, in conjunction with the polystyrene spheres lithographic process. The nitrogen-doped ultrananocrystalline diamond (N2-UNCD) films were coated on thus formed SiNA by using microwave plasma chemical vapor deposition (MPECVD) process. The N2-UNCD/SiNWs films, which were grown in CH4/N2 plasma at 700°C, possess markedly better conductivity (σN2-UNCD=2-3(Ω cm)-1) than the conventional c-UNCD/SiNWs films, which were grown in CH4/Ar plasma at around 425°C (σUNCD=0.01(Ω cm)-1). The EFE process of the former materials can be turned on at (E0)N2-UNCD=7.80 V/μm achieving larger EFE current density of (Je)N2-UNCD=0.67 mA/cm2 at an applied field of 13.0 V/μm, whereas that of the latter materials need (E0)=UNCD=18.25 V/μm to turn on, attaining only (Je)UNCD=0.024 mA/cm2 at same applied field. While the plasma illumination process can be triggered at around 0.21 V/μm, regardless of the characteristics of the cathod materials, plasma illumination intensity/current density is larger when the materials with better EFE properties were used as cathodes for the plasma device. The plasma illumination current density is around (Jpi)N2-UNCD=5.0 mA/cm2 (at an applied field of 0.35 V/μm) when N2-UNCD/SiNWs film was used as cathode, whereas the (Jpi)UNCD=3.2 mA/cm2 when the conventional UNCD/SiNWs film was used as cathode. In summary, it is observed that the plasma illumination characteristics of the CP-devices is closely correlated with the electron field emission behavior of the cathode materials, which, in turn, was enhanced - ue to the improvement in conductivity of the UNCD films
    Relation: Vacuum Nanoelectronics Conference (IVNC), 2012 25th International, pp.1-8
    DOI: 10.1109/IVNC.2012.6316959
    Appears in Collections:[物理學系暨研究所] 會議論文

    Files in This Item:

    File Description SizeFormat
    Fabrication of nitrogen-doped ultrananocrystalline diamond nanowire arrays with enhanced field emission and plasma illumination performance.pdf全文755KbAdobe PDF448View/Open
    index.html0KbHTML279View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback