淡江大學機構典藏:Item 987654321/97189
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    题名: Gold ion implantation induced high conductivity and enhanced electron field emission properties in ultrananocrystalline diamond films
    作者: K. J. Sankaran;Chen, H. C.;B. Sundaravel;Lee, C. Y.;Tai, N. H.;Lin I. N.
    贡献者: 淡江大學物理學系
    日期: 2013-02
    上传时间: 2014-03-18 09:46:11 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: We report high conductivity of 185 (Ω cm)−1 and superior electron field emission (EFE) properties, viz. low turn-on field of 4.88 V/μm with high EFE current density of 6.52 mA/cm2 at an applied field of 8.0 V/μm in ultrananocrystalline diamond (UNCD) films due to gold ion implantation. Transmission electron microscopy examinations reveal the presence of Au nanoparticles in films, which result in the induction of nanographitic phases in grain boundaries, forming conduction channels for electron transport. Highly conducting Au ion implanted UNCD films overwhelms that of nitrogen doped ones and will create a remarkable impact to diamond-based electronics.
    關聯: Applied Physics Letters 102(6), 061604(4pages)
    DOI: 10.1063/1.4792744
    显示于类别:[物理學系暨研究所] 期刊論文

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