Structural and electrical properties of conducting diamond nanowires

doi:10.1021/am302430p

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/97187

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/97187

Title:	Structural and electrical properties of conducting diamond nanowires
Authors:	Kamatchi Jothiramalingam Sankaran;Lin, Yen-Fu;Jian, Wen-Bin;Chen, Huang-Chin;Kalpataru Panda;Balakrishnan Sundaravel;Dong, Chung-Li;Tai, Nyan-Hwa;Lin, I-Nan
Contributors:	淡江大學物理學系
Keywords:	diamond nanowire films;graphitic grain boundary;high resolution transmission electron microscopy;scanning tunneling spectroscopy;hopping transport;electron field emission
Date:	2013-01-17
Issue Date:	2014-03-18 09:42:40 (UTC+8)
Publisher:	Washington: American Chemical Society
Abstract:	Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.
Relation:	ACS Applied Materials and Interfaces 5(4), pp.1294-1301
DOI:	10.1021/am302430p
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	252	View/Open
index.html	0Kb	HTML	63	View/Open
Structural and Electrical Properties of Conducting Diamond Nanowires.pdf	969Kb	Adobe PDF	2	View/Open

Loading...