本研究之銅網毛細蒸汽腔體係利用銅質毛細結構與放射狀溝槽之冷凝上板作為蒸汽腔體內部主要之結構，毛細構造的製作是採用線放電加工法，先在69.8mm*42mm*1mm銅板的兩面分別切割出寬0.34mm、深0.55mm正交微溝槽，最後再以擴散接合方式成型為78mm*50mm*7.5mm的蒸汽腔體。經研發製造的過程，改以交叉結構支撐取代原有之正交微溝槽以簡化製程，此設計以銅網為毛細結構，中央由線切割加工之交叉結構支撐，尺寸為73mm*48.5mm*2.7mm。交叉結構蒸汽腔體的性能優於相同尺寸的紅銅片，當加熱功率為130W時，蒸汽腔體的熱源溫度為68.8℃、系統熱阻值為0.363℃/W，與紅銅片比較，熱源降低4.3℃，系統熱阻降低5.7%；加熱功率為60W時，蒸汽腔體系統熱阻為0.311℃/W，與紅銅片比較，熱源溫度降低3.9℃，系統熱阻降低22%。此外利用紅外線熱影儀攝錄其表面溫度證實蒸汽腔體之均溫性，最後利用數值模擬分析比較實驗數據計算蒸汽腔體之等效熱傳導系數K值為850W/m．K。 The research of the copper wick vapor chamber with a copper wick structure and radial grooved upper plate are the major structure inside. The wick structure use wire electrical discharge machining (WEDM) technology to make many channels which wide and depth size are 0.34 and 0.55 mm on etch side of a copper plate and the channel etch side are interlacing. The copper plate volume is 69.8 mm * 42 mm * 1 mm and we use diffusing bonding technology to connect many of the copper plates with interlace channels and others to be a vapor chamber witch volume is 78 mm * 50 mm * 7.5 mm. Through the fabrication process, we use the crossed structure and copper mesh to simplify the making process. This design of vapor chamber centre was supported by a crossed structure manufactured with wire cut and the size was 73 mm * 48.5 mm * 2.7 mm. The result showed that the vapor chamber with crossed structure had better performance than that of a copper one of the same size. When heating power was 130 W, the heat source temperature of vapor chamber was 68.8 .degree.C and the system thermal resistance was 0.363 .degree.C/W. Compared to a copper spreader,the heat source temperature was lowered by 4.3 .degree.C and the system thermal resistance was lowered for 5.7%. When heating power was 60W,the system thermal resistance of vapor chamber was 0.311 .degree.C/W. Compared to a copper to copper spreader, the heat source temperature was lowered by 3.9 .degree.C and the system thermal resistance was lowered for 22%. In addition, the homogeneous temperature distribution of the vapor chamber was identified by its surface temperature recorded by IR thermal imager. The e*perimental data were compared with numerical simulation and analysis to afford that the equivalent thermal conductivity, K, of the vapor chamber was 850W/m.k.