The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon

機構典藏 > College of Engineering > Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering > Proceeding > Item 987654321/96424

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/96424

Title:	The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon
Authors:	Chao, C. L.;Ma, K. J.;Liu, D. S.;Sheu, C. C.;Sheu, S. C.;Lin, Y. S.;Lin, H. Y.;Chang, F. Y.
Contributors:	淡江大學機械與機電工程學系
Keywords:	單晶矽;電解製程中修銳技術;研磨;表面形態;矽晶圓;Single Crystal Silicon;Electrolytic Inprocess Dressing;Grinding;Surface Morphology;Silicon Wafer
Date:	2000-11
Issue Date:	2014-03-07 11:37:59 (UTC+8)
Abstract:	In order to machine the 300mm-400mm silicon wafer to the specifiedsurface roughness and flatness, ELID diamond grinding were employed inthis study to investigate its feasibility. Cast iron fiber reinforceddiamond wheels were used to grind silicon wafers and various ELIDparameters were systematically tested to examine their influences onthe grinding process. The results showed that, under the same grindingconditions, the obtained surfaces were characterized by (1) thickpoly/amorphous layer with occasionally deep-penetrated cracks, (2)thick amorphous layer (up to 250nm) with distributed dislocation loops(-300nm into the substrate), and (3) thin amorphous layer (up to 30nm)when (1) no ELID, (2) ELID with rather low peak voltage and currentand (3) ELID with high peak voltage and current were applied in thegrinding processes.
Relation:	第四屆奈米工程暨微系統技術研討會論文集，頁2-61(5pages)
Appears in Collections:	[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Proceeding

Files in This Item:

File	Size	Format
The Surface Morphology and Sub surface Characteristics of ELID Ground Single Crystal Silicon_英文摘要.docx	15Kb	Microsoft Word	134	View/Open

Loading...