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    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/96424

    題名: The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon
    作者: Chao, C. L.;Ma, K. J.;Liu, D. S.;Sheu, C. C.;Sheu, S. C.;Lin, Y. S.;Lin, H. Y.;Chang, F. Y.
    貢獻者: 淡江大學機械與機電工程學系
    關鍵詞: 單晶矽;電解製程中修銳技術;研磨;表面形態;矽晶圓;Single Crystal Silicon;Electrolytic Inprocess Dressing;Grinding;Surface Morphology;Silicon Wafer
    日期: 2000-11
    上傳時間: 2014-03-07 11:37:59 (UTC+8)
    摘要: In order to machine the 300mm-400mm silicon wafer to the specifiedsurface roughness and flatness, ELID diamond grinding were employed inthis study to investigate its feasibility. Cast iron fiber reinforceddiamond wheels were used to grind silicon wafers and various ELIDparameters were systematically tested to examine their influences onthe grinding process. The results showed that, under the same grindingconditions, the obtained surfaces were characterized by (1) thickpoly/amorphous layer with occasionally deep-penetrated cracks, (2)thick amorphous layer (up to 250nm) with distributed dislocation loops(-300nm into the substrate), and (3) thin amorphous layer (up to 30nm)when (1) no ELID, (2) ELID with rather low peak voltage and currentand (3) ELID with high peak voltage and current were applied in thegrinding processes.
    關聯: 第四屆奈米工程暨微系統技術研討會論文集,頁2-61(5pages)
    顯示於類別:[機械與機電工程學系暨研究所] 會議論文


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