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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/96424


    Title: The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon
    Authors: Chao, C. L.;Ma, K. J.;Liu, D. S.;Sheu, C. C.;Sheu, S. C.;Lin, Y. S.;Lin, H. Y.;Chang, F. Y.
    Contributors: 淡江大學機械與機電工程學系
    Keywords: 單晶矽;電解製程中修銳技術;研磨;表面形態;矽晶圓;Single Crystal Silicon;Electrolytic Inprocess Dressing;Grinding;Surface Morphology;Silicon Wafer
    Date: 2000-11
    Issue Date: 2014-03-07 11:37:59 (UTC+8)
    Abstract: In order to machine the 300mm-400mm silicon wafer to the specifiedsurface roughness and flatness, ELID diamond grinding were employed inthis study to investigate its feasibility. Cast iron fiber reinforceddiamond wheels were used to grind silicon wafers and various ELIDparameters were systematically tested to examine their influences onthe grinding process. The results showed that, under the same grindingconditions, the obtained surfaces were characterized by (1) thickpoly/amorphous layer with occasionally deep-penetrated cracks, (2)thick amorphous layer (up to 250nm) with distributed dislocation loops(-300nm into the substrate), and (3) thin amorphous layer (up to 30nm)when (1) no ELID, (2) ELID with rather low peak voltage and currentand (3) ELID with high peak voltage and current were applied in thegrinding processes.
    Relation: 第四屆奈米工程暨微系統技術研討會論文集,頁2-61(5pages)
    Appears in Collections:[機械與機電工程學系暨研究所] 會議論文

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