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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/96415


    Title: 矽單晶的結晶方向對其破裂型態影響之探討
    Other Titles: The Orientation Affection on the Crack Growth of Diamond Machined (111) Si Wafer
    Authors: 許清鋒;趙崇禮;劉益銘;陳淑卿
    Contributors: 淡江大學機械與機電工程學系
    Keywords: 矽單晶;結晶方向;鑽石壓痕;鑽石刮痕;裂縫成長;Silicon crystal;Crystalline orientation;Diamond indentation;Diamondscratch;Crack growth
    Date: 2002-11
    Issue Date: 2014-03-07 11:35:19 (UTC+8)
    Abstract: 硬脆性材料如矽單晶、玻璃及陶瓷等材料因具有高硬度、高脆性的特點,加工不 易且在加工過程中容易產生裂縫,造成加工困難度之增加。其中矽單晶因其結構 為非等方性結晶排列,所以在加工過程中,材料容易沿著幾個特定的結晶方向造 成不同程度的劈裂現象。本研究即針對(111)矽晶圓做不同荷重下之鑽石壓痕 試驗及鑽石刮痕試驗,並藉由SEM來觀察壓痕或刮痕溝槽附近之裂縫成長情形, 以探討晶向及切削負荷對於裂縫成長之影響。
    The diamond indentation and scratch tests of (111) silicon wafer have been conducted in this study. The morphology and growth of cracks induced by different loads has been observed by OM and SEM. The results show that the cracks grow along the 110 direction when the load is under 25g, while the crack growing has stronger relation to the scratch, or indentation, direction when the load is over 25g.
    Relation: 第十一屆國防科技學術研討會暨國防工業訓儲預(士)研發成果展:國家科技發展與國防科技自主,頁N.A.(CD)
    Appears in Collections:[機械與機電工程學系暨研究所] 會議論文

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