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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/96093


    Title: Soft X-ray characterization of Zn1−xSnxOy electronic structure for thin film photovoltaics
    Authors: Mukes Kapilashrami;Coleman X. Kronawitter;Tobias Törndahl;Johan Lindahl;Adam Hultqvist;Wang, Wei-Cheng;Chang, Ching-Lin;Samuel S. Mao;Guo, Jinghua
    Contributors: 淡江大學物理學系
    Date: 2012-06
    Issue Date: 2014-02-24 10:36:18 (UTC+8)
    Publisher: Cambridge: R S C Publications
    Abstract: Zinc tin oxide (Zn1−xSnxOy) has been proposed as an alternative buffer layer material to the toxic, and light narrow-bandgap CdS layer in CuIn1−x,GaxSe2 thin film solar cell modules. In this present study, synchrotron-based soft X-ray absorption and emission spectroscopies have been employed to probe the densities of states of intrinsic ZnO, Zn1−xSnxOy and SnOx thin films grown by atomic layer deposition. A distinct variation in the bandgap is observed with increasing Sn concentration, which has been confirmed independently by combined ellipsometry-reflectometry measurements. These data correlate directly to the open circuit potentials of corresponding solar cells, indicating that the buffer layer composition is associated with a modification of the band discontinuity at the CIGS interface. Resonantly excited emission spectra, which express the admixture of unoccupied O 2p with Zn 3d, 4s, and 4p states, reveal a strong suppression in the hybridization between the O 2p conduction band and the Zn 3d valence band with increasing Sn concentration.
    Relation: Physical Chemistry Chemical Physics 14, pp.10154-10159
    DOI: 10.1039/C2CP41394A
    Appears in Collections:[物理學系暨研究所] 期刊論文

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