本研究使用Cl2/Ar感應耦合電漿對GaN/InGaN材料進行蝕刻，主要的製程參數如 氣體流速、感應耦合電漿功率、基板自偏壓、腔體壓力等對蝕刻機制及其相關的 蝕刻速率、形貌等影響都做了探討。GaN/InGaN材料的蝕刻速率隨著Cl 活性離子 密度和離子能量的增加而升高，當基板自偏壓-400 V，感應耦合電漿功率為350 W時蝕刻速率可達到450 nm/min，且可得到垂直的蝕刻側壁。InGaN/GaN材料的蝕 刻速率受Cl 活性離子密度的影響較受單純的離子能量的影響來的顯著。 InGaN/GaN etching was performed using inductively coupled Cl2/Ar plasmas, and the effects of main process parameters such as gas flow rate, induction rf power, self bias voltage, chamber pressure on the etching mechanisms and their relations to the etch rates and morphologies of InGaN/GaN materials were studied. InGaN/GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile having an etch rate over 450 nm/min could be obtained at 350 induction power and -400 V bias voltage. The InGaN/GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself.
