English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 55176/89445 (62%)
造訪人次 : 10659020      線上人數 : 16
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/95893

    題名: MOS Charge Pump for Sub-2.0V Operation
    作者: Cheng, Kuo-Hsing;Chang, Chung-Yu
    貢獻者: 淡江大學電機工程學系
    關鍵詞: 電荷泵激;低電壓;臨界電壓;互補式金氧半導體;Charge Pumping;Low Voltage;Threshold Voltage;Cmos
    日期: 2002-08
    上傳時間: 2014-02-13 11:17:29 (UTC+8)
    摘要: A new charge-pump circuit is proposed in this paper. Two major factors limiting the charge pump gain and efficiency, are the threshold voltage drop and body effect. In this paper, the positive charge- pump circuit uses the charge transfer switches and floating well; therefore, it can reduce the threshold voltage drop and the body effect problems. Due to the new circuit scheme, the proposed charge- pump circuit can be used in a conventional n-well CMOS process for low supply voltage and have high charge pump gain and efficiency.
    關聯: 2002年超大型積體電路設計暨計算機輔助設計技術研討會論文集=Proceedings of of the 2002 VLSI Design/CAD Symposium,頁125-128
    顯示於類別:[電機工程學系暨研究所] 會議論文


    檔案 大小格式瀏覽次數
    MOS Charge Pump for Sub-2.0V Operation_英文摘要.docx20KbMicrosoft Word130檢視/開啟



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋