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    題名: MOS Charge Pump for Sub-2.0V Operation
    作者: Cheng, Kuo-Hsing;Chang, Chung-Yu
    貢獻者: 淡江大學電機工程學系
    關鍵詞: 電荷泵激;低電壓;臨界電壓;互補式金氧半導體;Charge Pumping;Low Voltage;Threshold Voltage;Cmos
    日期: 2002-08
    上傳時間: 2014-02-13 11:17:29 (UTC+8)
    摘要: A new charge-pump circuit is proposed in this paper. Two major factors limiting the charge pump gain and efficiency, are the threshold voltage drop and body effect. In this paper, the positive charge- pump circuit uses the charge transfer switches and floating well; therefore, it can reduce the threshold voltage drop and the body effect problems. Due to the new circuit scheme, the proposed charge- pump circuit can be used in a conventional n-well CMOS process for low supply voltage and have high charge pump gain and efficiency.
    關聯: 2002年超大型積體電路設計暨計算機輔助設計技術研討會論文集=Proceedings of of the 2002 VLSI Design/CAD Symposium,頁125-128
    顯示於類別:[電機工程學系暨研究所] 會議論文

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