ITO透明導電薄膜於可撓式基板之性質研究

淡江大學機構典藏 > 工學院 > 機械與機電工程學系暨研究所 > 學位論文 > Item 987654321/94492

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题名:	ITO透明導電薄膜於可撓式基板之性質研究
其它题名:	Properties of transparent conductive oxide ITO films flexible substrates
作者:	張淳瑜;Chang, Chun-Yu
贡献者:	淡江大學機械與機電工程學系碩士班林清彬;Lin, Chin-Bin
关键词:	摻雜;氧化銦錫;鑭;鉬;鉀;doping;Indium Tin Oxide;lanthanum;molybdenum;potassium
日期:	2013
上传时间:	2014-01-23 14:42:16 (UTC+8)
摘要:	本研究使用共析出法成功製備摻雜鑭、鉬、鉀之氧化銦錫粉末，其摻雜濃度分別為4at%、6at%、8at%，探討其粉體顏色、電學以及光學性質。並以溶劑熱法增加摻雜離子之ITO粉末氧空缺，由XRD繞射儀得知摻雜元素並不會改變氧化銦錫的特徵峰值，再由全光譜儀分析，得知摻雜鑭還有鉀可以提高ITO的穿透率，使其在可見光區達到良好的穿透，摻雜鉬則會使穿透率變差；由霍爾電壓量測其電學性質，可以知道摻雜元素並不會提升ITO的導電能力，摻雜離子量會使載子濃度上升，但卻會使遷移率下降。 Precipitation method In this study were prepared successfully doped La, Mo, K –doped ITO powders, its doping concentration of 4at%, 6at%, 8at%, to explore its powder color, electrical and optical properties. And solvothermal increase the ITO powder doped with oxygen ion vacancies by XRD diffraction doping elements that do not change the characteristic peak ITO, and then analyzed by the full spectrum, that there are La,K-doped can improve the transmittance of ITO, so that in the visible region to achieve good penetrate, penetration Mo-doped will make the poor; by the Hall voltage measurements of its electrical properties, can know the doping element does not improve the conductivity of ITO, the amount of dopant ions will increase the carrier concentration, but will decrease the mobility.
显示于类别:	[機械與機電工程學系暨研究所] 學位論文

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