English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 49378/84106 (59%)
造訪人次 : 7373805      線上人數 : 76
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/94491


    題名: 氧化銦錫的特性與製程分析
    其他題名: Characteristis and process analysis of indium-tin oxide
    作者: 羅婕;Luo, Chieh
    貢獻者: 淡江大學機械與機電工程學系碩士班
    林清彬
    關鍵詞: 氧化銦錫;摻雜;;;Indium Tin Oxide;doping;magnesium;Aluminum
    日期: 2013
    上傳時間: 2014-01-23 14:42:13 (UTC+8)
    摘要: 本文透過共析出法及溶劑熱法成功製備出摻雜鎂及鋁離子之氧化銦錫粉末,摻雜濃度為4at%、6at%與8at%,並探討摻雜對粉體光學及電學性質影響。經溶劑熱處理後,氧空缺增加,粉體的顏色轉為淡藍或深藍色。由全光譜儀分析得知,摻雜鎂會降低其能隙,呈現出紅移的趨勢,但隨著摻雜濃度提升,會呈現藍移的趨勢;而摻雜鋁離子則會增加能隙,呈現出藍移的趨勢。由霍爾電壓得知,隨著摻雜濃度提升,載子濃度也隨之提升,載子遷移率則下降。
    The present study has been successful synthesized the Mg and Al -doped ITO powders by the methods of co-precipitation and solvothermal, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. Doping Mg in ITO powders lowered its band-gap energy, and then the spectrum appeared the trends of red-shifted, but with the increment of the doping concentration, the spectrum appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer. The band-gap energy of Al -doped ITO powders tended to increase and then the spectrums appeared the trends of blue-shifted. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased.
    顯示於類別:[機械與機電工程學系暨研究所] 學位論文

    文件中的檔案:

    檔案 大小格式瀏覽次數
    index.html0KbHTML86檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋