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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/93959

    Title: Ⅱ-Ⅵ族半導體奈米結構生長機制之研究
    Other Titles: Study for the formation mechanism of Ⅱ-VI semiconductor nanostructures
    Authors: 楊登竣;Yang, Deng-Jiun
    Contributors: 淡江大學物理學系碩士班
    Keywords: II-VI 半導體奈米結構;硒硫鎘;熱璧式磊晶系統;量子點;Ⅱ-Ⅵ semiconductor Nano structure;CdSSe;Hot Wall Epitaxy(HWE) System;Quantum Dots
    Date: 2013
    Issue Date: 2014-01-23 13:44:04 (UTC+8)
    Abstract: 本實驗是研究II-VI 族半導體奈米結構(Nano Structure),嘗試在GaAs基板上以硒硫鎘 (CdSSe)生長特殊奈米結構。在量子點的特殊結構中,我們經由適當的實驗條件,可以製作出量子環與量子花之特殊結構,針對這些實驗條件,我們分析出這些特殊結構的生長機制。首先先洗滌基板使基板上出現坑洞與凹槽,藉由量子點圍繞與聚集的特性長出量子環,再嘗試以不同成熟時間的方式來生長。在實驗上,以熱壁式磊晶系統來製作我們的樣品,藉由控制GaAs(001)基板表面洗滌、磊晶厚度與成熟期時間等條件,得到較佳的量子點結構。
    This thesis is devoted to study the properties of Ⅱ-Ⅵ semiconductor Nano structure. We attempt to develop spacial nano structures based on GaAs substrate with CdSSe.We have fabricated some special structure such as:necklace , flower like as well as quantum ring structures.We also describe the mechanism for the formations of above structures. First we rinse the substrate in order to cause flutes and fillisters, grow quantum ring based on the properties of surrounding and assembling of quantum dot and then try to grow them with different ways.Experimentally, our samples of CdSSe quantum dots were growth on the (001) GaAs substrate by a Hot Wall Epitaxy(HWE) System.We controlled the conditions of the etching , epitaxy thickness and mature period to get special structure of quantum dots.
    Appears in Collections:[物理學系暨研究所] 學位論文

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