Tunable Schottky barrier height and surface potential by using hydrogen ions

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/93400

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题名:	Tunable Schottky barrier height and surface potential by using hydrogen ions
作者:	Hsu, J. K.;Lin, T. Y.;Lai, C. Y.;Chien, T. C.;Song, J. H.;Yeh, P. H.
贡献者:	淡江大學物理學系
关键词:	Plasma materials processing;II-VI semiconductors;Passivation;Plasma devices;Schottky barriers
日期:	2013-09-01
上传时间:	2014-01-08 16:47:08 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	In this research work, hydrogen ion can be used for Schottky barrier height and surface potential tuning with specific power. The current output of Ohmic and Schottky contacted device would be enhanced from 8.25 μA to 171 μA and 2.84 pA to 1.3 μA (hydrogen plasma power was increased from 0 to 60 W), respectively. With adequate hydrogen plasma power, the transport mechanism (variation of Schottky barrier height and surface potential) can be studied in vacuum and atmosphere environment. In this work, we not only improve the current output but also provide the transport mechanism in vacuum and atmosphere environment. The enhancement and intension of ZnO nanowires device can be achieved by using hydrogen plasma treatment for extensive application.
關聯:	Applied Physics Letters 103(12), 123507(3pages)
DOI:	10.1063/1.4821425
显示于类别:	[物理學系暨研究所] 期刊論文

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