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    題名: Tunable Schottky barrier height and surface potential by using hydrogen ions
    作者: Hsu, J. K.;Lin, T. Y.;Lai, C. Y.;Chien, T. C.;Song, J. H.;Yeh, P. H.
    貢獻者: 淡江大學物理學系
    關鍵詞: Plasma materials processing;II-VI semiconductors;Passivation;Plasma devices;Schottky barriers
    日期: 2013-09-01
    上傳時間: 2014-01-08 16:47:08 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: In this research work, hydrogen ion can be used for Schottky barrier height and surface potential tuning with specific power. The current output of Ohmic and Schottky contacted device would be enhanced from 8.25 μA to 171 μA and 2.84 pA to 1.3 μA (hydrogen plasma power was increased from 0 to 60 W), respectively. With adequate hydrogen plasma power, the transport mechanism (variation of Schottky barrier height and surface potential) can be studied in vacuum and atmosphere environment. In this work, we not only improve the current output but also provide the transport mechanism in vacuum and atmosphere environment. The enhancement and intension of ZnO nanowires device can be achieved by using hydrogen plasma treatment for extensive application.
    關聯: Applied Physics Letters 103(12), 123507(3pages)
    DOI: 10.1063/1.4821425
    顯示於類別:[物理學系暨研究所] 期刊論文

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