淡江大學機構典藏:Item 987654321/93317
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    題名: Charged impurity-induced scatterings in chemical vapor deposited graphene
    作者: Li, Ming-Yang;Tang, Chiu-Chun;Ling, D. C.;Li, L. J.;Chi, C. C.;Chen, Jeng-Chung
    貢獻者: 淡江大學物理學系
    日期: 2013-12-06
    上傳時間: 2013-12-23 14:51:31 (UTC+8)
    出版者: A I P Publishing LLC
    摘要: We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.
    關聯: Journal of Applied Physics 114(23), pp.233703(8pages)
    DOI: 10.1063/1.4852435
    顯示於類別:[物理學系暨研究所] 期刊論文

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