A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding

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Title:	A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding
Authors:	Lin, Bo-Wen;Wu, Nian-Jheng;Wu, YewChung Sermon;Hsu, S. C.
Contributors:	淡江大學化學工程與材料工程學系
Date:	2013-05
Issue Date:	2013-08-29 17:06:08 (UTC+8)
Publisher:	Piscataway: Institute of Electrical and Electronics Engineers
Abstract:	Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 µm to 40 µm. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 µm Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature.
Relation:	Journal of Display Technology 9(5), pp.371-376
Appears in Collections:	[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

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