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    題名: A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding
    作者: Lin, Bo-Wen;Wu, Nian-Jheng;Wu, YewChung Sermon;Hsu, S. C.
    貢獻者: 淡江大學化學工程與材料工程學系
    日期: 2013-05
    上傳時間: 2013-08-29 17:06:08 (UTC+8)
    出版者: Piscataway: Institute of Electrical and Electronics Engineers
    摘要: Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 µm to 40 µm. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 µm Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature.
    關聯: Journal of Display Technology 9(5), pp.371-376
    顯示於類別:[化學工程與材料工程學系暨研究所] 期刊論文

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