English  |  正體中文  |  简体中文  |  Items with full text/Total items : 51296/86412 (59%)
Visitors : 8177921      Online Users : 61
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/92077


    Title: Effect of weak reductant on properties of electroless copper polyacrylonitrile nanocomposites for electromagnetic interference shielding
    Authors: Tsao, Keng-Yu;Chen, Chang-Cheng;Huang, Chi-Yuan;Tsai, Ching-Shan;Yang, Sung-Yeng;Yeh, Jen-Taut;Chen , Kan-Nan
    Contributors: 淡江大學化學學系
    Keywords: EMI;electroless;CuS;polyacrylonitrile
    Date: 2010-05-27
    Issue Date: 2013-08-13 14:53:53 (UTC+8)
    Publisher: Hoboken: John Wiley & Sons, Inc.
    Abstract: In this work, the electroless copper method with different reductant compositions (NaHSO3/Na2 S2O3·5H2O and Na2S2O3·5H2O) without sensitizing and activating, was used to deposit copper-sulfide deposition on the polyacrylonitrile (PAN) surface for electromagnetic interference (EMI) shielding materials. The weak reductant, NaHSO3, in the electroless copper method was used to control the phase of copper-sulfide deposition. The Cux(x=1–1.8)S was deposited on the PAN (CuxS-PAN) by reductant composition (NaHSO3/Na2S2O3·5H2O) and the Cux(x=1–1.8)S deposition of CuxS-PAN possesses three kinds of copper-sulfide phases (CuS, Cu1.75S and Cu1.8S). However, the electroless copper with reductant was only Na2S2O3·5H2O (without weak reductant, NaHSO3), the hexagonal CuS deposition was plated on the PAN (CuS-PAN) and increased the EMI shielding effectiveness of CuS-PAN composites about 10–15 dB. In this study, the best EMI SE of CuS-PAN and CuxS-PAN composites were about 27–30 dB and 15–17 dB respectively, as the cupric ion concentration was 0.24 M. The volume resistivity of CuS-PAN composite was about 1000 times lower than that of CuxS-PAN composite and lowest volume resistivity of CuS-PAN composites was 0.012 Ω cm, as the cupric ion concentration was 0.24 M.
    Relation: Journal of Applied Polymer Science 118(2), pp. 936-942
    DOI: 10.1002/app.32467
    Appears in Collections:[化學學系暨研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML149View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback