淡江大學機構典藏:Item 987654321/91658
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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/91658


    Title: Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films
    Authors: Palathinkal, Thomas Joseph;Tai, Nyan-Hwa;Lee, Chi-Young;Niu, Huan;Cheng, Hsiu-Fung;Pong, Way-Faung;Lin, I-Nan
    Contributors: 淡江大學物理學系
    Keywords: electron field emission;films;ion implantation;UNCD;X-ray photoelectron spectroscopy
    Date: 2009-06
    Issue Date: 2013-07-24 11:10:08 (UTC+8)
    Publisher: Weinheim: Wiley - V C H Verlag GmbH & Co. KGaA
    Abstract: The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra-nanocrystalline diamond (UNCD) films are reported. Low-dose (1012 ions/cm2) B ion implantation & annealing processes insignificantly changed the EFE properties, high-dose (1015 ions/cm2) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B ion implantations & annealing processes. Such a phenomenon is accounted for by the fact that N ions residing in grain boundaries can convert the UNCD grains into semi-conducting by charge-transfer process, whereas B ions react with carbon forming covalent bonds and are not transferring the charges with UNCD grains.
    Relation: Plasma Processes and Polymers 6(1), pp.S834–S839
    DOI: 10.1002/ppap.200930107
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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