Growth behavior of nanocrystalline diamond films on ultrananocrystalline diamond nuclei: The transmission electron microscopy studies

doi:10.1063/1.3153957

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/91625

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题名:	Growth behavior of nanocrystalline diamond films on ultrananocrystalline diamond nuclei: The transmission electron microscopy studies
作者:	Wang, Chuan-Sheng;Chen, Huang-Chin;Cheng, Hsiu-Fung;Lin, I-Nan
贡献者:	淡江大學物理學系
日期:	2009
上传时间:	2013-07-22 10:00:57 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	Micron-crystalline diamond (MCD) films with a unique microstructure were synthesized using a modified nucleation and growth process, in which a thin layer of ultrananocrystalline diamond (UNCD) was used as nucleation layer for growing diamond films in H2-plasma. Thus obtained (MCD)UNCD diamond films consist of nanosized diamond clusters ( ∼ 10 nm in size) surrounding the large diamond grains ( ∼ 300 nm in size), exhibiting better electron field emission (EFE) properties than the conventional diamond materials with faceted grains. The EFE of these (MCD)UNCD films can be turned on at E0 = 11.1 V/μm, achieving EFE current density as large as (Je) = 0.7 mA/cm2 at 25 V/μm applied field, which can be attributed to the presence of large proportion of UNCD grains lying in between the MCD grains, forming an electron conduction path and thus facilitating the EFE process. Transmission electron microscopy examinations reveal that such a unique microstructure was formed by agglomeration and coalescence of the nanosized UNCD grains.
關聯:	Journal of Applied Physics 105(12), 124311(7pages)
DOI:	10.1063/1.3153957
显示于类别:	[物理學系暨研究所] 期刊論文

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