淡江大學機構典藏:Item 987654321/91620
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    题名: Thickness-Dependent Electronic Structure of Intermetallic CeCo2 Nanothin Films Studied by X-ray Absorption Spectroscopy
    作者: Dong, Chung-Li;Chen, Chi-Liang;Asokan, Kandasami;Chang, Ching-Lin;Chen, Yang-Yuan;Lee, Jyh-Fu;Guo, Jinghua
    贡献者: 淡江大學物理學系
    日期: 2009
    上传时间: 2013-07-18 15:06:01 (UTC+8)
    出版者: Washington, DC: American Chemical Society
    摘要: We report the electronic structure study of intermetallic CeCo2 nanothin films of various thicknesses by X-ray absorption near-edge structure (XANES) spectroscopy at Ce L3-, Co K-, and L2,3-edges. The Ce L3-edge absorption spectra reveal that the contribution of tetravalent Ce component increases with the film thickness, and all investigated nanothin films exhibit intermediate valence nature. Variation of the spectral intensities observed at the Co K-edge threshold implies modification in the Co 3d states and the enhancement of 3d-4f-5d hybridization. The Co 3d and Ce 4f occupation numbers were estimated from these spectroscopic results. The present study brings out how the surface-to-bulk ratio and the charge transfer between Ce and Co ions affect the electronic structure of nanothin films.
    關聯: Langmuir 25(13), pp.7568-7572
    DOI: 10.1021/la803872w
    显示于类别:[物理學系暨研究所] 期刊論文

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