淡江大學機構典藏:Item 987654321/91610
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 62830/95882 (66%)
造訪人次 : 4156163      線上人數 : 696
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧：
  • 您可在西文檢索詞彙前後加上"雙引號"，以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋，建議至進階搜尋限定作者欄位，可獲得較完整資料
    •  進階搜尋


    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/91610


    題名: Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices
    作者: Chai, Yen-Hsin;Yarn, Kao-Feng;Chen, Chun-Nan
    貢獻者: 淡江大學物理學系
    關鍵詞: Semimetal;Anti-crossing;Interface effect;Bond orbital model;Superlattice;InAs/GaSb
    日期: 2009-09
    上傳時間: 2013-07-17 15:13:19 (UTC+8)
    出版者: Bucharest: Institute of Materials Physics
    摘要: The band structures of (001), (111), and (110) InAs/GaSb superlattices in the semimetal regime are studied using a modified bond orbital model. The anti-crossing behavior between the sub-bands as well as the semiconductor-semimetal transition will be analyzed in detail, and is shown to be strongly dependent on the growth direction. The effects of interface hetero-bonds (In-Sb and Ga-As) on the InAs/GaSb superlattices are also discussed.
    關聯: Digest Journal of Nanomaterials and Biostructures 4(3), pp.519-530
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML41檢視/開啟
    Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs GaSb Superlattices.pdf554KbAdobe PDF42檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋