Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/91610

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题名:	Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices
作者:	Chai, Yen-Hsin;Yarn, Kao-Feng;Chen, Chun-Nan
贡献者:	淡江大學物理學系
关键词:	Semimetal;Anti-crossing;Interface effect;Bond orbital model;Superlattice;InAs/GaSb
日期:	2009-09
上传时间:	2013-07-17 15:13:19 (UTC+8)
出版者:	Bucharest: Institute of Materials Physics
摘要:	The band structures of (001), (111), and (110) InAs/GaSb superlattices in the semimetal regime are studied using a modified bond orbital model. The anti-crossing behavior between the sub-bands as well as the semiconductor-semimetal transition will be analyzed in detail, and is shown to be strongly dependent on the growth direction. The effects of interface hetero-bonds (In-Sb and Ga-As) on the InAs/GaSb superlattices are also discussed.
關聯:	Digest Journal of Nanomaterials and Biostructures 4(3), pp.519-530
显示于类别:	[物理學系暨研究所] 期刊論文

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