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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/91610

    Title: Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices
    Authors: Chai, Yen-Hsin;Yarn, Kao-Feng;Chen, Chun-Nan
    Contributors: 淡江大學物理學系
    Keywords: Semimetal;Anti-crossing;Interface effect;Bond orbital model;Superlattice;InAs/GaSb
    Date: 2009-09
    Issue Date: 2013-07-17 15:13:19 (UTC+8)
    Publisher: Bucharest: Institute of Materials Physics
    Abstract: The band structures of (001), (111), and (110) InAs/GaSb superlattices in the semimetal regime are studied using a modified bond orbital model. The anti-crossing behavior between the sub-bands as well as the semiconductor-semimetal transition will be analyzed in detail, and is shown to be strongly dependent on the growth direction. The effects of interface hetero-bonds (In-Sb and Ga-As) on the InAs/GaSb superlattices are also discussed.
    Relation: Digest Journal of Nanomaterials and Biostructures 4(3), pp.519-530
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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