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    题名: Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices
    作者: Chai, Yen-Hsin;Yarn, Kao-Feng;Chen, Chun-Nan
    贡献者: 淡江大學物理學系
    关键词: Semimetal;Anti-crossing;Interface effect;Bond orbital model;Superlattice;InAs/GaSb
    日期: 2009-09
    上传时间: 2013-07-17 15:13:19 (UTC+8)
    出版者: Bucharest: Institute of Materials Physics
    摘要: The band structures of (001), (111), and (110) InAs/GaSb superlattices in the semimetal regime are studied using a modified bond orbital model. The anti-crossing behavior between the sub-bands as well as the semiconductor-semimetal transition will be analyzed in detail, and is shown to be strongly dependent on the growth direction. The effects of interface hetero-bonds (In-Sb and Ga-As) on the InAs/GaSb superlattices are also discussed.
    關聯: Digest Journal of Nanomaterials and Biostructures 4(3), pp.519-530
    显示于类别:[物理學系暨研究所] 期刊論文

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