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    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/90457

    題名: Investigation of ICP Etching of CVD Diamond Film
    其他題名: 感應耦合電漿蝕刻化學氣相沉積多晶鑽石膜之研究
    作者: Chao, Choung-Lii;Chou, Wen-Chen;Chien, Chun-Yu;Ma, Kung-Jenn;Lin, Hung-Yi;Wu, Tung-Chuan
    貢獻者: 淡江大學機械與機電工程學系
    關鍵詞: ICP;atmospheric pressure air plasma;CVD diamond film
    日期: 2007-04
    上傳時間: 2013-06-26 11:50:23 (UTC+8)
    出版者: 臺北市:中國機械工程學會
    摘要: CVD diamond film possesses many outstanding physical and mechanical properties which make it a very important engineering material. However, high hardness value and extreme brittleness have made CVD diamond film a very difficult material to be machined by conventional grinding and polishing process. To solve the problem, there have been many researches focused on improving the surface roughness of the as-grown CVD diamond film by various approaches. The atmospheric pressure air plasma (APAP), in conjunction with the inductive coupling plasma (ICP) was used in the present study to etch and smooth the CVD diamond film. The results showed that the APAP could activate the top layer of the diamond film which made it easy to react with the reactant gases and to be removed during the subsequent ICP process. Though little differences were observed between the micro-Raman spectra of the CVD diamond films with/without the APAP pretreatment, the surface morphology did exhibit quite significant variations.
    關聯: 中國機械工程學刊=Journal of the Chinese Society of Mechanical Engineers 28(2),頁169-174
    顯示於類別:[機械與機電工程學系暨研究所] 期刊論文


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