本實驗利用溶膠-凝膠法和/或水熱法來製備TiO2、P-TiO2和 (P/Si)-TiO2膜。實驗過程中，添加磷與矽元素於TiO2結構中並比較不同的製備程序來看其TiO2膜結晶的相態、晶粒尺寸、膜厚、染料吸附量、膜表面形態、可見光穿透率、電化學交流阻抗以及光電轉換效率的影響。以溶膠-凝膠法所製備含磷與矽元素的銳鈦礦TiO2膜在染料(N719)的吸附量上明顯的比市售粉體P25所製備出的膜吸附量還高且所組裝的DSSCs元件呈現較高的光電轉換效率(提高約60%)。結合溶膠-凝膠法和水熱法所製得含磷與矽元素的銳鈦礦TiO2膜其對光敏化染料的吸附能力則更進一步提高，且當膜厚為20 μm左右時所組裝的DSSCs元件具光電轉換效率6.12%，而其所相對應的開環電壓為0.68V、短路電流為13.92 mA/cm2和填充因子為0.65。 The (P/Si)-TiO2 films for DSSCs application were synthesized by the sol-gel method and/or hydrothermal methods. Effects of calcination temperatures on phase contents, grain growth, film thickness, dye loading, surface morphology, visible light transmittance, electrochemical impedance and photoelectric conversion efficiency of the (P/Si)-TiO2 films were examined. Doping P and Si elements in the anatase-TiO2 can improve dye (N719) loading of the TiO2 particles. The photoelectric conversion of DSSCs using the (P/Si)-TiO2 film prepared by the sol-gel method gave better photoelectric conversion than that using a commercial TiO2, Degussa P25, film. By combining the sol-gel and hydrothermal methods, the obtained (P/Si)-TiO2 films absorbed more N719 than that prepared by solely the sol-gel method. The DSSCs using the (P/Si)-TiO2 film of 20-μm thickness prepared by the sol-gel and hydrothermal methods can give a photoelectric conversion of 6.12% with Voc = 0.68V, Jsc = 13.92 mA/cm2 and f.f.= 0.65.
