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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/87907


    Title: 製備多孔性氮化鎵微米柱結構並利用機械式剝離技術製作高功率垂直式發光二極體之研究
    Other Titles: A study of mechanical lift-off technology for high-efficiency vertical LEDs by using micro-porous GaN template
    Authors: 侯翔彬;Hou, Hsiang-Pin
    Contributors: 淡江大學化學工程與材料工程學系碩士班
    許世杰;Hsu, Shih-Chieh
    Keywords: 機械式剝離;發光二極體;多孔性;氮化鎵;mechanical lift-off;vertical LED;micro-porous;GaN;wet etching;wafer bonding
    Date: 2012
    Issue Date: 2013-04-13 11:51:27 (UTC+8)
    Abstract: 本論文中主要探討製備多孔性氮化鎵微米柱結構,以利後續使用機械式剝離技術來去除導電性、散熱性皆不佳的藍寶石基板,以製作高功率垂直式氮化鎵發光二極體元件。我們欲使用此技術來取代目前業界常用的雷射剝離技術,以達到低成本、大量且快速生產的製程目的,並進而避免在雷射剝離時,高能量的雷射對氮化鎵薄膜表面產生永久性的破壞,導致後續製程的困難和發光效率的降低等問題。
    首先我們利用高溫熔融態氫氧化鉀溶液,將氮化鎵及藍寶石基板之介面,蝕刻出多孔性氮化鎵結構之犧牲層,後續再藉由有機金屬化學氣相沉積,成長氮化鎵發光二極體之結構,最後使用晶圓鍵合的方式,利用矽基板與藍寶石基板之間熱膨脹係數的差異,以機械式剝離技術將藍寶石基板移除,並置換成導電、導熱性較高之矽基板,達成製作高功率垂直式氮化鎵發光二極體之目的。
    我們發現平均線插排密度以穿透式電子顯微鏡測量後,從2×109 cm-2 降低至1×108 cm-2。故可藉由降低缺陷密度增加發光二極體元件之內部量子效率。此一研究不僅能開發新的高功率垂直式氮化鎵發光二極體元件製程技術,更期望能利用此一技術與業界結合,提供未來氮化鎵發光二極體元件製程的最佳選擇。
    同時,我們也成功的製備380×380 μm2之晶粒,且在操作電流20 mA下,觀測到以機械式剝離技術製作而成的垂直式發光二極體,總輸出的光通量和傳統結構發光二極體相比增加了100%。證明以機械剝離技術代替雷射剝離技術置換藍寶石基板之方法確實可行,而且效果非常良好。
    本論文成功整合我們所製備出來的多孔性氮化鎵微米柱結構犧牲層,藉由晶圓鍵合,使用機械式剝離技術移除低散熱性、低導電性之藍寶石基板,取代故有的傳統雷射剝離基板技術,可望解決在未來大面積晶圓級發光二極體的製程上所將面臨的困難與挑戰,此方法製程簡單且成本低廉,相當有利於應用在高亮度固態照明之領域。
    We discuss the fabrication of mechanical lift-off high quality thin GaN with Micro-Porous GaN template for vertical light emitting diodes (V-LEDs). The Micro-Porous GaN templates were formed on the GaN/sapphire substrate interface under high temperature of 280℃ during 10 min molten KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and reduced from 2×109 to 1×108 cm−2.
    Finally, the mechanical lift-off process is claimed to be successful by using the Micro-Porous GaN structures as a sacrificial layer during wafer bonding process.
    The chip size was 380×380 μm2 and the electroluminescence (EL) intensity has shown significant 100% enhancement under operating current of 20 mA.
    A vertical LED was successfully fabricated by using a mechanical lift-off method which is low cost and convenience. It is considered that these developments can lead solid-state lighting to the general lighting applications.
    Appears in Collections:[化學工程與材料工程學系暨研究所] 學位論文

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