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    Title: 銦錫氧化物奈米片條透明導電塗膜
    Other Titles: Transparent conducting coating composed by Indium-tin oxide (ITO) nanostrips
    Authors: 王彥智;Wang, Yen-Chih
    Contributors: 淡江大學化學工程與材料工程學系碩士班
    張朝欽
    Keywords: 銦錫氧化物;共沉澱法;複合塗膜;紫外光曝光;片電阻;indium-tin oxide;co-precipitation;composite coating;UV-Curing;sheet resistance
    Date: 2013
    Issue Date: 2013-04-13 11:51:20 (UTC+8)
    Abstract: 本研究製備出的片條狀銦錫氧化物,是由方塊狀銦錫氫氧化物轉變而成。ITO片條是以共沉澱法製備,並加入聚電解質聚磺酸苯乙烯做為結構生長導向劑及穩定劑,探討PSS及溫度對前驅物型態的影響。在室溫下沉澱並熟化三天的前驅物為寬60 ~ 100 nm、長500 ~ 800 nm的片條,經過高溫煆燒片條狀ITO前驅物轉變成ITO,以壓克力單體三異丙基矽基丙烯酸酯(MSMA)做為黏附劑,利用刮膜法及紫外光曝光,製作透明導電塗膜。ITO片條及複合塗膜的結構、型態、相態、光電性質分別利用穿透式電子顯微鏡、掃描式電子顯微鏡、傅立葉轉換紅外光線光譜儀、X光繞射儀、紫外線-可見光光譜儀和四點探針等分析。隨壓克力單體含量增加,使塗膜結構更緊密也擁有更高的可見光穿透度。當MSMA/ITO為0.6時獲得的塗膜片電阻為0.32 kohm/sq、可見平均穿透度為82.5%。
    In this study, fabrication of strip-like indium-tin oxide (ITO) precursors from indium-tin hydroxide (ITH) nanocubes is demonstrated. The strip-like precursors were prepared using a co-precipitation method, in which a polyelectrolyte, poly(styrenesulfonic acid) (PSS), was employed both as the structure-directing agent and stabilizer. The effects of PSS and temperature on morphology of the precursors were investigated. Typical trip-like precursors with 60~100 nm wide and 500~800 nm long were prepared by means of precipitation at room temperature and after aging 3 day. Then ITO nanostrips were prepared from the strip-like precursors by post-calcination. Transparent conductive coatings composed of ITO nanostrips and acrylic binder, 3-(trimethoxy silyl)propyl methacrylate (MSMA), were prepared via doctor-blade coating and UV curing. The structure, morphology, phase, optical and electrical properties of the formed particles and coatings were characterized via TEM, SEM, FTIR, XRD, UV-visible, and four point probe..., etc. Increasing the binder content resulted in a denser structure of the coating and higher transmittance in the visible range. A coating with 0.32 kohm/sq sheet resistance and 82.5% average transmittance could be attained when the weight ratio of MSMA/ITO = 0.6.
    Appears in Collections:[化學工程與材料工程學系暨研究所] 學位論文

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