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    Title: X光吸收光譜研究銅鉻氧化物之電子與原子結構
    Other Titles: lectronic structure of delafossite oxides of CuCr1-xO2(0≦x≦0.1) studied by X-ray absorption spectroscopy
    Authors: 楊力達;Yang, Li-Ta
    Contributors: 淡江大學物理學系碩士班
    彭維鋒;Pong, Way-Faung
    Keywords: X光吸收光譜;銅鉻氧;銅鐵礦;X-ray absorption;CuCr1-xO2;delafossite
    Date: 2012
    Issue Date: 2013-04-13 11:03:04 (UTC+8)
    Abstract: 本論文主要以X 光吸收光譜及價帶光電子能譜實驗研究銅鐵礦透
    光半導體CuCr1-xO2(0≦x≦0.1)的電子與原子結構。此實驗主要研究
    當鉻缺 (x≠0)時,一系列不同含量之樣品在導帶以及價帶上傳輸性質
    之變化與機制研究。由延伸X 光吸收精細結構(X-ray absorption fine
    structure,EXAFS)之量測上發現當鉻缺變大時,系列樣品之原子結
    構沒有顯著變化,X 光吸收近邊緣結構(X-ray absorption near edge
    structure,XANES)則顯示了鉻缺陷會使得銅離子由Cu+轉變為Cu2+
    而產生電洞,由價電帶光電子能譜上也顯示出當鉻缺會使得Cu 3d-O
    2p 之間的軌域混成增加,我們也可以得知系列樣品之載子傳遞方式
    是在Cu 3d 與O 2p 之間傳導電子;電洞與軌域混成增加之變化皆利
    於增加樣品之導電能力,進而增加半導體的傳導效率。
    We have investigated the electronic and atomic structures of
    delafossite CuCr1-xO2 (0≦x≦1) system. No significant changes in local
    atomic structure of CuCr1-xO2 were observed by extended x-ray
    absorption fine structure (EXAFS). X-ray absorption near edge fine
    structure (XANES) shows that the valence state of Cu increased from Cu1+
    to Cu2+ will create hole doping with decreasing Cr concentration. Valence
    band x-ray photoemission spectroscopy (VB-XPS) indicates the enhanced
    hybridization of Cu 3d-O 2p orbital. The data observed in XANES and
    VB-XPS suggest the carrier transport between Cu 3d and O 2p. Both the
    hole doping and enhanced hybridization of Cu 3d-O 2p are important for
    increasing the conductivity.
    Appears in Collections:[物理學系暨研究所] 學位論文

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