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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/87388

    Title: 在GaAs基板上設計ZnSe與CdSSe薄膜之結構
    Other Titles: Design the ZnSe and CdSSe film of the structure on the GaAs substrate
    Authors: 劉克威;Liu, Ku-Wei
    Contributors: 淡江大學物理學系碩士班
    鄭振益;Jen, Jen-Yi
    Keywords: ⅡⅥ族半導體;ZnSe;CdSSe;CdS;ⅡⅥsemiconductor
    Date: 2013
    Issue Date: 2013-04-13 11:02:32 (UTC+8)
    Abstract: 本研究利用熱壁式磊晶系統製作出CdSSe/ZnSe多層膜,並運用熱壁式磊晶系統的高真空和可條整烘烤溫度的優點來對樣品做熱退火,界此找出ZnSe與CdS薄膜之最佳平坦程度,利於發光層生長。觀察ZnSe、CdS、CdSSe不同厚度之發光波長,並試著用ZnSe所發出來的藍光及利用CdSSe所發出來的黃光製作多層膜樣品,看看是否可以調和成白光。
    In this study is used the Hot-Wall Epitaxy System produce CdSSe/ZnSe
    multilayers ,and used of Hot-Wall Epitaxy System’s high vacuum and can
    strip the whole of the baking temperature thermal annealing samples,
    by this to find out ZnSe and Cds thin films in the best flat extent ,
    and conductive to growth the light-emitting layers.Observation ZnSe、
    CdS、CdSSe’s emission wavelength of different thickness.Use the ZnSe emission blue light and CdSSe emission yellow light to try to produce multilayer samples,and try to reconcile into white light.
    Appears in Collections:[物理學系暨研究所] 學位論文

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