Ultrafast dynamics of hot electrons and phonons in chemical vapor deposited graphene

doi:10.1063/1.4799377

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/85048

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題名:	Ultrafast dynamics of hot electrons and phonons in chemical vapor deposited graphene
作者:	Lin, Kuan-Chun;Li, Ming-Yang;Li, L.J.;Ling, D. C.;Chi, C. C.;Chen, Jeng-Chung
貢獻者:	淡江大學物理學系
日期:	2013-04
上傳時間:	2013-04-07 00:35:37 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	The relaxation dynamics of photoexcited carriers in a chemical vapor deposited graphene transferred on quartz substrate are investigated using ultrafast optical-pump terahertz (THz)-probe spectroscopy. Terahertz transmission through graphene sample is reduced by optical pumping. The change of transmission decays exponentially after the optical pulse. We find the decay time is insensitive to the substrate temperatures from 10~K to 300~K, but increases sublinearly with pump flunce. We model the relaxation process involving electron-phonon coupling together with a set of rate equations to describe the transient responses of quasi-particals and optical phonons. We can fit the observered transient terahertz transmission very well. The extracted carrier temperature follows the same trend of decay time as a function of fluence. High pump fluence can significantly increase the carrier temperature and broaden the carrier distributions, consequently causing the reduction of optical phonon emission efficiency and slowing down cooling rate. The differences of our results in comparison to similar measurements of expitaxial graphene on SiC will be disscussed.
關聯:	Journal of Applied Physics 113(13), 133511(5pages)
DOI:	10.1063/1.4799377
顯示於類別:	[物理學系暨研究所] 期刊論文

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