Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching

doi:10.1186/1556-276X-7-140

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/81293

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題名:	Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching
其他題名:	利用高分子奈米球光罩結合金輔助蝕刻技術製作矽鍺奈米柱陣列
作者:	Lai, Chih-Chung;Lee, Yun-Ju;Yeh, Ping-Hung;Lee, Sheng-Wei
貢獻者:	淡江大學物理學系
關鍵詞:	Ge;nanorod;self-assembly;nanosphere lithography
日期:	2012-02-18
上傳時間:	2013-03-08 11:20:26 (UTC+8)
出版者:	Heidelberg: SpringerOpen
摘要:	The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involving a locally temperature-sensitive redox reaction to explain this strong temperature dependence of the morphologies of SiGe NRs. At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically impeded, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs. With transmission electron microscopy and scanning electron microscopy analyses, this study provides a beneficial scheme to design and fabricate low-dimensional SiGe-based nanostructures for possible applications.
關聯:	Nanoscale Research Letters 7(1), 140(6pages)
DOI:	10.1186/1556-276X-7-140
顯示於類別:	[物理學系暨研究所] 期刊論文

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