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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/81293

    Title: Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching
    Other Titles: 利用高分子奈米球光罩結合金輔助蝕刻技術製作矽鍺奈米柱陣列
    Authors: Lai, Chih-Chung;Lee, Yun-Ju;Yeh, ‘‰Ping-Hung;Lee, Sheng-Wei
    Contributors: 淡江大學物理學系
    Keywords: Ge;nanorod;self-assembly;nanosphere lithography
    Date: 2012-02-18
    Issue Date: 2013-03-08 11:20:26 (UTC+8)
    Publisher: Heidelberg: SpringerOpen
    Abstract: The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involving a locally temperature-sensitive redox reaction to explain this strong temperature dependence of the morphologies of SiGe NRs. At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically impeded, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs. With transmission electron microscopy and scanning electron microscopy analyses, this study provides a beneficial scheme to design and fabricate low-dimensional SiGe-based nanostructures for possible applications.
    Relation: Nanoscale Research Letters 7(1), 140(6pages)
    DOI: 10.1186/1556-276X-7-140
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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