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    題名: Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1-xO2 (x = 0 - 0.1)
    作者: Singh, S. B.;Yang, L. T.;Wang, Y. F.;Shao, Y. C.;Chiang, C. W.;Chiou, J. W.;Lin, K. T.;Chen, S. C.;Wang, B. Y.;Chuang, C. H.;Ling, D. C.;Pong, W. F.;Tsai, M.-H.;Tsai, H. M.;Pao, C. W.;Shiu, H. W.;Chen, C. H.;Lin, H.-J.;Lee, J. F.;Yamane, H.;Kosugi, N.
    貢獻者: 淡江大學物理學系
    日期: 2012-12-07
    上傳時間: 2013-01-25 11:10:44 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr1−xO2 (x=0−0.1) compounds was investigated using O K-, Cu, and Cr L3,2-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3+. These results indicate that the p-type conductivity in the CuCr1−xO2 samples is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct Cu1+-Cu2+ hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.
    關聯: Physical Review B: Condensed Matter and Materials Physics 86(24), 241103(R)(6pages)
    DOI: 10.1103/PhysRevB.86.241103
    顯示於類別:[物理學系暨研究所] 期刊論文

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